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High-responsivity plasmonics-based GaAs metal-semiconductor-metal photodetectors

机译:高响应性的基于等离子体的GaAs金属-半导体-金属光电探测器

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摘要

We report the experimental characterization of high-responsivity plasmonics-based GaAs metal-semiconductor-metal photodetector (MSM-PD) employing metal nano-gratings. Both the geometry and light absorption near the designed wavelength are theoretically and experimentally investigated. The measured photocurrent enhancement is 4-times in comparison with a conventional single-slit MSM-PD. We observe reduction in the responsivity as the bias voltage increases and the input light polarization varies. Our experimental results demonstrate the feasibility of developing a high-responsivity, low bias-voltage high-speed MSM-PD.
机译:我们报告了采用金属纳米光栅的高响应性基于等离子体的GaAs金属-半导体-金属光电探测器(MSM-PD)的实验表征。理论上和实验上都研究了设计波长附近的几何形状和光吸收。与传统的单缝MSM-PD相比,测得的光电流增强为4倍。我们观察到,随着偏置电压的增加和输入光偏振的变化,响应度会降低。我们的实验结果证明了开发高响应性,低偏置电压的高速MSM-PD的可行性。

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